信息通信技术与政策

信息通信技术与政策

信息通信技术与政策 ›› 2022, Vol. 48 ›› Issue (5): 78-81.doi: 10.12267/j.issn.2096-5931.2022.05.010

研究论文 上一篇    下一篇

新型存储器产业发展现状与展望

Recent progress and future of emerging memory industry

黄阳棋   

  1. 中国电子信息产业发展研究院,北京 100048
  • 收稿日期:2022-03-15 出版日期:2022-05-15 发布日期:2022-05-26
  • 作者简介:
    黄阳棋 中国电子信息产业发展研究院集成电路研究所制造研究室副主任,主要研究方向为半导体存储器产业,包括闪存、内存产业研究及趋势分析,新型存储技术路线研究及产业趋势分析,内存计算等泛存储领域技术路线及产业发展研究

HUANG Yangqi   

  1. China Center for Information Industry Development, Beijing 100048, China
  • Received:2022-03-15 Online:2022-05-15 Published:2022-05-26

摘要:

为了解决日益严重的存储墙问题对计算系统的制约,应对新的存储应用需求,新型存储器正逐渐从科研走向产业化。英特尔、三星、台积电等国际巨头纷纷加入相关技术的产业化推进中。新型存储技术主要包括相变存储、磁变存储和阻变存储。相变存储适用于大容量的独立式存储应用,磁变存储适用于小容量高速低功耗的嵌入式应用,阻变存储则有可能在未来的人工智能、存算一体等领域发挥作用。

关键词: 存储器, 新型存储技术, 相变存储, 磁变存储, 阻变存储

Abstract:

As the growing of memory wall problem and emerging memory applications, the emerging memories are gradually approaching to the commercial application. International giants such as Intel, Samsung, and TSMC have joined in the industrialization of related technologies. Emerging memory technologies mainly include phase-change memory, magnetic-change memory and resistive-change memory. Phase-change memory is ideal for large-capacity stand-alone storage applications, magnetic-change storage is better for small-capacity, high-speed, low-power embedded applications, and resistive storage is likely to play a role in future applications, such as artificial intelligence and process in memory.

Key words: memory, new storage technology, phase-change storage, magnetic-change storage, resistive-change storage

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