Progress of integrated solid-state photonic quantum memory

doi:10.12267/j.issn.2096-5931.2023.07.006

Abstract

Abstract:

Integrated quantum memory plays a crucial role in large-scale quantum networks. Over the past years, rare-earth ions doped solid-state materials have shown significant advantages in achieving high-performance integrated photonic quantum memory. This kind of photonic quantum memory enables photonic quantum storage to have long storage time, high efficiency, high fidelity, large bandwidth and multimode capacity, and can also be integrated with other quantum functional devices. This paper reviews progress of integrated photonics quantum memories with various devices fabricated in rare-earth ions doped solid-state materials, such as erbium doped silica fibers, titanium-indiffused LiNbO₃ waveguides, femtosecond laser micromachining waveguides, and focused ions beam etching photonic devices. It also discusses the merits and potential of those photonics quantum memories and the challenges.

Key words: quantum network, quantum storage, rare-earth ions doped solid-state materials, integration

CLC Number:

O413
TN929.1

WEI Shihai, ZHANG Xueying, LIAO Jinyu, FAN Boyu, FAN Yunru, ZHOU Qiang. Progress of integrated solid-state photonic quantum memory[J]. Information and Communications Technology and Policy, 2023, 49(7): 44-52.

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URL:

http://ictp.caict.ac.cn/EN/10.12267/j.issn.2096-5931.2023.07.006

http://ictp.caict.ac.cn/EN/Y2023/V49/I7/44

Figures/Tables 5

References 45

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工艺方案	存储材料	存储波长/nm	存储时间/ns	存储效率/%	存储带宽/MHz	存储模式/个
掺铒石英光纤	Er³⁺:SiO₂^{[27⇓⇓-30]}	1 532	230	2.0	50 000	1 650
钛扩散掺杂铌酸锂波导	Tm³⁺:LiNbO₃^[31]	795	60	0.2	5 000	26
钛扩散掺杂铌酸锂波导	Er³⁺:LiNbO₃^[33]	1 532	48	0.1	6 000	1
激光直写I型掺杂波导	Pr³⁺:Y₂SiO₅^[34,36]	606	5 500	7.0	60	130
激光直写II型掺杂波导	Pr³⁺:Y₂SiO₅^[35]	606	13 000	2.7	4	1
激光直写II型掺杂波导	Eu³⁺:Y₂SiO₅^[24,38]	580	9 880	34.4	11	1
激光直写III型掺杂波导	Eu³⁺:Y₂SiO₅^[39]	580	2 500	26.8	10	1
	Er³⁺:Y₂SiO₅^[22]	1 538	325	10.9	100	1
	Er³⁺:LiNbO₃^[40]	1 532	260	1.0	4 000	330
激光直写IV型掺杂波导	Eu³⁺:Y₂SiO₅^[37]	580	10 500	2.4	2	1
聚焦离子束刻蚀掺杂器件	Nd³⁺:YVO₄^[43]	880	75	2.5	80	1
聚焦离子束刻蚀掺杂器件	Er³⁺:Y₂SiO₅^[44]	1 539	165	0.2	90	10

工艺方案	存储材料	存储波长/nm	存储时间/ns	存储效率/%	存储带宽/MHz	存储模式/个
掺铒石英光纤	Er³⁺:SiO₂^{[27⇓⇓-30]}	1 532	230	2.0	50 000	1 650
钛扩散掺杂铌酸锂波导	Tm³⁺:LiNbO₃^[31]	795	60	0.2	5 000	26
钛扩散掺杂铌酸锂波导	Er³⁺:LiNbO₃^[33]	1 532	48	0.1	6 000	1
激光直写I型掺杂波导	Pr³⁺:Y₂SiO₅^[34,36]	606	5 500	7.0	60	130
激光直写II型掺杂波导	Pr³⁺:Y₂SiO₅^[35]	606	13 000	2.7	4	1
激光直写II型掺杂波导	Eu³⁺:Y₂SiO₅^[24,38]	580	9 880	34.4	11	1
激光直写III型掺杂波导	Eu³⁺:Y₂SiO₅^[39]	580	2 500	26.8	10	1
	Er³⁺:Y₂SiO₅^[22]	1 538	325	10.9	100	1
	Er³⁺:LiNbO₃^[40]	1 532	260	1.0	4 000	330
激光直写IV型掺杂波导	Eu³⁺:Y₂SiO₅^[37]	580	10 500	2.4	2	1
聚焦离子束刻蚀掺杂器件	Nd³⁺:YVO₄^[43]	880	75	2.5	80	1
聚焦离子束刻蚀掺杂器件	Er³⁺:Y₂SiO₅^[44]	1 539	165	0.2	90	10