Abstract: Due to the physical limit of LDMOS devices, 5G(5th generation mobile networks) base stations began to use RF GaN devices to replace LDMOS devices. As a wide band gap semiconductor, gallium nitride can withstand higher operating voltage, which means that its power density and working temperature are higher. Therefore, it has the characteristics of high-power density, low energy consumption, high frequency and wide bandwidth. This paper analyzes the global patent distribution of GaN and GaN power amplifier from the perspectives of annual applications, applicants, geographical distribution, and technology distribution. Based on the characteristics of patent data, this paper gives some suggestions to promote the construction of intellectual property capacity of GaN enterprises in China.

Key words: GaN, GaN power amplifier, patent